Dresden 2014 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 53: Nitrides: Preparation of nonpolar and semipolar orientations

HL 53.4: Talk

Tuesday, April 1, 2014, 14:45–15:00, POT 151

Luminescence characteristics of pyramidal InGaN/GaN light emitter — •Jan Wagner, Michael Jetter, and Peter Michler — Institut für Halbleiteroptik und Funktionelle Grenzflächen and Research Center SCoPE, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany

The green spectral range is an important topic for the field of semiconductor light emitters nowadays. The lack of efficient InGaN/GaN green emitters due to the Quantum Confined Stark Effect (QCSE) limits the use of semiconductors in optical devices. The QCSE reduces the recombination efficiency for electrons and holes in these emitter drastically by shifting the wavefunctions away from each other. To overcome this we grow semipolar InGaN quantum wells on top of three dimensional GaN pyramids. The use of semipolar facets instead of c-plane GaN as growth surface reduces the QCSE by a large amount and should increase the efficiency of green InGaN/GaN emitter. Since up to now semipolar and nonpolar GaN substrates are not widely available we use the method of epitaxial lateral overgrowth (ELO) to force a three-dimensional growth of the GaN. This provides us with easy accessible semipolar growth surfaces for the InGaN quantum well. In this contribution we would like to show our latest results in the control and growth of pyramidal GaN structures as well as the optical characteristics and the dynamics of the charge carriers of these structures.