Dresden 2014 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 53: Nitrides: Preparation of nonpolar and semipolar orientations
HL 53.9: Vortrag
Dienstag, 1. April 2014, 16:00–16:15, POT 151
Direct identification of luminescence from I1 type basal plane stacking faults in semipolar AlGaN layer with low Al content — •Ingo Tischer1, Manuel Frey1, Matthias Hocker1, Robert A.R. Leute2, Ferdinand Scholz2, Heiko Groiss3, Erich Müller3, Dagmar Gerthsen3, Willem van Mierlo4, Johannes Biskupek4, Ute Kaiser4, and Klaus Thonke1 — 1Institut für Quantenmaterie, Gruppe Halbleiterphysik, Universität Ulm, 89081 Ulm — 2Institut für Optoelektronik, Universität Ulm, 89081 Ulm — 3Laboratorium für Elektronenmikrokopie, Karlsruhe Institute of Technology, 76131 Karlsruhe — 4Materialwissenschaftliche Elektronenmikroskopie, Universität Ulm, 89081 Ulm
For nitride-based laser diodes and LEDs high quality AlGaN electron blocking layers are required. Due to the lattice mismatch of AlGaN and GaN, the occurance of structural defects increases strongly, especially on semipolar surfaces. In this study, we assign distinct spectral luminescence features to structural defects of AlGaN layers on a semipolar GaN template. Spatially resolved cathodoluminescence (CL) recorded at temperatures below 10K using a scanning electron microscope, performed on the cross section and on the {1011} side facet surface, allows to determine the spatial and spectral distribution of luminescence features. High resolution STEM investigations at the same sample area allow the direct assignment of optical bands to distinct structural features like basal plane stacking faults and regions with different Al content.