HL 5: Nitrides: mostly transport properties and recombination processes
Monday, March 31, 2014, 09:30–11:00, POT 251
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09:30 |
HL 5.1 |
Non-radiative recombination mechanisms in GaN by first-principles total energy calculations — •Ying Cui, Christoph Freysoldt, and Jörg Neugebauer
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09:45 |
HL 5.2 |
Recombination rates in GaInN/GaN quantum wells: Beyond the ABC model — •Torsten Langer, Alexey Chernikov, Dimitri Kalincev, Marina Gerhard, Heiko Bremers, Uwe Rossow, Martin Koch, and Andreas Hangleiter
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10:00 |
HL 5.3 |
Reduced electron accumulation at InN(0001) surfaces via saturation of surface states by donor- or acceptor-type adsorbates — •Stephanie Reiß, Anja Eisenhardt, Stefan Krischok, and Marcel Himmerlich
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10:15 |
HL 5.4 |
Formation of Schottky contacts on n-type GaN bulk crystals grown by hydride vapor phase epitaxy (HVPE) — •Ronald Stübner, Vladimir Kolkovsky, Jörg Weber, Gunnar Leibiger, and Frank Habel
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10:30 |
HL 5.5 |
Electrical properties of Si-doped AlGaN layers with high aluminum mole fraction — •Harald Pingel, Frank Mehnke, Eberhard Richter, Frank Brunner, Tim Wernicke, Christian Kuhn, Viola Kueller, Arne Knauer, Michael Lapeyrade, Markus Weyers, and Michael Kneissl
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10:45 |
HL 5.6 |
Field-dependent photoluminescence of InAlN/GaN based HEMT structures — •Christoph Koch, Martin Feneberg, Rüdiger Goldhahn, María Fátima Romero, Fernando Calle, Zhan Gao, María Ángeles Pampillón, Enrique San Andrés, Pedro C. Feijoo, and Pavel Y. Bokov
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