Dresden 2014 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 65: Devices
HL 65.4: Vortrag
Mittwoch, 2. April 2014, 12:15–12:30, POT 151
Subnanosecond relaxation of free carriers in compensated n- and p-type germanium — •Nils Deßmann1, Sergey Pavlov2, Valery Shastin3, Roman Zhukavin3, Veniamin Tsyplenkov3, Stephan Winnerl4, Martin Mittendorff5, Nikolai Abrosimov6, Helge Riemann6, and Heinz-Wilhelm Hübers1,2 — 1Technische Universität Berlin, Berlin, Deutschland — 2Deutsches Zentrum für Luft- und Raumfahrt, Berlin, Deutschland — 3Institute for Physics of Microstructures, Nizhny Novgorod, Russland — 4Helmholtz-Zentrum Dresden-Rossendorf, Dresden-Rossendorf, Deutschland — 5Technische Universität Dresden, Dresden, Deutschland — 6Leibniz-Institut für Kristallzüchtung, Berlin, Deutschland
The relaxation of free holes and electrons in highly compensated germanium doped with gallium (p-Ge:Ga:Sb) and antimony (n-Ge:Sb:Ga) has been studied by a pump-probe experiment with the free-electron laser FELBE at the Helmholtz-Zentrum Dresden-Rossendorf. The relaxation times vary between 20 ps and 300 ps and depend on the incident THz intensity and compensation level. The relaxation times are about five times shorter than previously obtained for uncompensated n-Ge:Sb and p-Ge:Ga. The results support the development of fast photoconductive detectors in the THz frequency range.