Dresden 2014 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 65: Devices
HL 65.6: Talk
Wednesday, April 2, 2014, 12:45–13:00, POT 151
Brittle to Ductile transition in silicon nanopillars — •Anton Davydok1, Thomas W. Cornelius1, Zhe Ren1, Francesca Mastropietro1, Michael Texier1, Christophe Tromas2, Ludovic Thilly2, Marie-Ingrid Richard1,3, and Olivier Thomas1 — 1IM2NP, Marseille, France — 2PPrime institute, Poitiers, France — 3ID01 beamline, ESRF, Grenoble, France
In recent years, nanostructures attracted enormous attention due to novel properties which, are not observed for bulk materials. When the object size becomes comparable to intrinsic length scales, finite-size and quantum size effects occur influencing the physical properties. For instance, while bulk silicon is brittle at ambient conditions and ductile at elevated temperatures, Si nanopillars of sufficiently small diameter are ductile at room temperature. In this work, we report on studies of the brittle-to-ductile transition of Si nanopillars as a function of their diameter. Pillars of various sizes were fabricated by electron beam lithography on a Silicon-on-insulator wafer and mechanically deformed employing a nano-indenter. Their structure and defects induced by the deformation were investigated by electron microscopy as well as by micro- and nanofocused X-ray diffraction. In addition, preliminary finite-element method calculations will be presented.