HL 65: Devices
Mittwoch, 2. April 2014, 11:30–13:15, POT 151
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11:30 |
HL 65.1 |
Influence of Charge Trapping on Memory Characteristics of Si:HfO2-Based Ferroelectric Field Effect Transistors — •Milan Pešić, Stefan Mueller, Stefan Slesazeck, Alban Zaka, Tom Herrmann, Ekaterina Yurchuk, Uwe Schröder, and Thomas Mikolajick
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11:45 |
HL 65.2 |
Non-volatile capacitance change in BiFeO3-coated photocapacitive MIS diodes — •l p Selvaraj, t You, v John, h Zeng, d Bürger, i Skorupa, a Lawerenz, o g Schmidt, and h Schmidt
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12:00 |
HL 65.3 |
RF- and DC Characterization of the High-k to InGaAs Interface in Gate Last nMOSFETs — •Guntrade Roll, Mikael Egard, Sofia Johansson, Erik Lind, and Lars-Erik Wernersson
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12:15 |
HL 65.4 |
Subnanosecond relaxation of free carriers in compensated n- and p-type germanium — •Nils Deßmann, Sergey Pavlov, Valery Shastin, Roman Zhukavin, Veniamin Tsyplenkov, Stephan Winnerl, Martin Mittendorff, Nikolai Abrosimov, Helge Riemann, and Heinz-Wilhelm Hübers
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12:30 |
HL 65.5 |
Nickel-related defects and their interaction with H in n- and p-type Si. — •Leopold Scheffler, Vladimir Kolkovsky, Philipp Saring, and Jörg Weber
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12:45 |
HL 65.6 |
Brittle to Ductile transition in silicon nanopillars — •Anton Davydok, Thomas W. Cornelius, Zhe Ren, Francesca Mastropietro, Michael Texier, Christophe Tromas, Ludovic Thilly, Marie-Ingrid Richard, and Olivier Thomas
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13:00 |
HL 65.7 |
The consecutive photoresponse performance of porous silicon carbide ultraviolet photodetectors — •Nima Naderi and Md Roslan Hashim
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