Dresden 2014 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 68: Heterostructures and interfaces

HL 68.1: Vortrag

Mittwoch, 2. April 2014, 15:00–15:15, POT 051

Electronic properties of the ideal Fe/GaAs(110) interface — •Tim Iffländer, Steffen Rolf-Pissarczyk, Lars Winking, Rainer G. Ulbrich, and Martin Wenderoth — IV. Physikalisches Institut, Georg-August-Universität Göttingen, Germany

In this study we present the investigation of the ideal Fe/GaAs(110) interface by scanning tunneling microscopy (STM) and spectroscopy (STS) in cross-sectional geometry. The Fe/GaAs(110) interface was grown at low temperature and subsequently annealed to room temperature yielding an epitaxial and atomically flat interface without any sign of compound formation [1]. Atomically resolved STS measurements across the Schottky contact reveal a continuum of states in the band gap of the semiconductor in the first few atomic layers at the interface. Furthermore, we report STS measurements of the electronic landscape of the space charge region (SCR) of the Schottky contact. The bending of the valence and conduction band along the SCR for differently n- and p-type doped Fe/GaAs(110) interfaces is demonstrated. To properly interpret the STS data the tip induced band bending has to be taken into consideration. This is addressed by means of a 3-dimensional finite element method calculation. A comparison of the measured and calculated data yields the Schottky barrier (SB) height of the interface and enables us to discuss our findings in the context of theoretical works on SB formation. This work was supported by the DFG SPP 1285.

[1] Winking et al. Appl. Phys. Lett. 92, 193102 (2008)