Parts | Days | Selection | Search | Updates | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 68: Heterostructures and interfaces
HL 68.6: Talk
Wednesday, April 2, 2014, 16:15–16:30, POT 051
Effect of growth conditions on electrical properties of epitaxial GaP/Si (100) — •Emad H. Hussein1,2, Fariba Hatami1, and W. Ted Masselink1 — 1Institut für Physik, Mathematisch-Naturwissenschaftliche Fakultät I, Humboldt Universtät zu Berlin, Newtonstrasse D-15, 12489 Berlin, Germany — 2On leave from department of Physics, college of Science, Al-Mustansiriyah University, Baghdad, Iraq
Gallium phosphide layers were grown using gas-source molecular beam epitaxy on p-type silicon substrates of orientation (100). The growth temperature was varied between 250 and 550 °C. Samples grown at 250 and 400 °C were thermally annealed at 500 and 480 °C for 10 and 90 min, respectively. (Subsequent contact alloying was carried out at much lower temperature.) Current-voltage (I-V) and capacitance-voltage (C-V) measurements were carried out in the dark at room temperature. The structures were also characterized using x-ray diffraction. From I-V measurements, it was found that the GaP/Si heterostructures grown at 400 °C and annealed at 480 °C for 90 minutes exhibited rectifying characteristics. The C-V data show the increased dopant diffusion during the annealing process. Furthermore, the C-V allows us to characterize the location of the junction and the electrically active defects. We conclude that the electrical properties of the GaP/Si can be improved after long-time annealing due to reduction of the defects in the structure which is in agreement with the x-ray analysis.