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HL: Fachverband Halbleiterphysik

HL 69: Emerging oxide semiconductors II (Focus session with DS)

HL 69.7: Topical Talk

Mittwoch, 2. April 2014, 17:00–17:30, POT 081

Surface properties of In₂O₃ and other semiconducting metal oxides — •Ulrike Diebold — Institute of Applied Physics, TU Vienna, Austria

The atomic-scale surface properties of semiconducting oxides influence, and often even dominate, their performance in a variety of applications. Often, local effects such as defects can severely affect the local electronic structure and surface chemistry. Our group uses STM in combination with DFT and area-averaging spectroscopies to investigate such phenomena at the atomic scale. Recent results on single crystalline In₂O₃ and other metal oxides will be discussed.