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HL: Fachverband Halbleiterphysik

HL 69: Emerging oxide semiconductors II (Focus session with DS)

HL 69.8: Vortrag

Mittwoch, 2. April 2014, 17:30–17:45, POT 081

STM and STS at the InO(111) cleavage surface — Robert Zielinski, Andrea Lenz, Josephine Schuppang, Mario Dähne, and •Holger Eisele — Technische Universität Berlin, Institut für Festkörperphysik, 10623 Berlin, Germany

The freshly cleaved In2O3(111) surface is investigated by UHV cross-sectional scanning tunneling microscopy and spectroscopy in order to achieve knowledge about its intrinsic electronic surface states. Atomically resolved STM images show a topographic contrast, which can be related with recent density functional theory calculations, and indicate a local charge enhancement within the surface unit cell. Scanning tunneling spectra reveil intrinsic states within the fundamental bulk band gap. Furthermore, the Fermi level is energetically located within the bulk band gap. This finding leads to the assumption that electron accumulation at this surface is not an intrinsic property, but related to extrinsic effects, such as e.g., non-stoichiometric material re-organization.