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HL: Fachverband Halbleiterphysik

HL 70: Semiconductor laser I: VECSEL and cascade lasers

HL 70.1: Vortrag

Mittwoch, 2. April 2014, 15:00–15:15, POT 112

Interband-Cascade-Lasers — •Matthias Dallner, Robert Weih, Florian Hau, Sven Höfling, and Martin Kamp — Technische Physik and Wilhelm-Conrad-Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, 97074 Würzburg

Interband cascade lasers (ICLs) are promising candidates to meet the demand for efficient and relieable laser sources in the mid-infrared wavelength region coming from a variety of applications such as high sensitivity tunable laser absorption spectroscopy (TLAS) or medical diagnostics. Grown on GaSb-substrates ICLs are able to cover a wide spectral range from 3 µ m to 5.7 µ m in cw operation above room temperature. Long wavelength devices based on InAs substrates, utilizing highly doped InAs-layers instead of superlattice claddings in view of a higher thermal conductivity, have shown laser emission up to 10.4 µ m. In this talk recent results on both, GaSb-based and InAs-based long wavelength ICLs are presented.

For ICLs grown on both substrates, GaSb and InAs, several design optimizations concerning the active region and the waveguide were examined. As a result GaSb based dry etched ridge waveguide lasers with more than 100 mW of cw output power at room temperature in the 3.5 µ m wavelength range could be fabricated. For the plasmon waveguide InAs-ICLs a maximum lasing temperature of -13 ^∘C in cw operation for a narrow ridge waveguide laser was achieved at 6 µ m. In pulsed operation threshold current densities below 1 kA/cm² were measured.