Dresden 2014 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 71: Energy materials: Silicon-based photovoltaics
HL 71.8: Vortrag
Mittwoch, 2. April 2014, 16:45–17:00, POT 151
Nanostructuring of silicon and surface passivation of silicon nanostructures for organic-inorganic hybrid solar cell absorbers — •Stefanie Greil1, Xin Zhang1, Matthias Zellmeier1, Silvia Janietz2, Norbert Nickel1, and Jörg Rappich1 — 1Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Institut für Silizium-Photovoltaik, Kekuléstr. 5, 12489 Berlin (Germany) — 2Fraunhofer-Institut für Angewandte Polymerforschung IAP, Abteilung Polymere und Elektronik, Geiselbergstr. 69, 14476 Potsdam (Germany)
Metal assisted chemical etching (MACE) using Ag nanoparticles as catalysts is an outstanding method for nanostructuring Si wafers to modify its optical properties for photovoltaic applications. To obtain regular nanostructure arrays, MACE processes are combined with shadow nanosphere lithography. Self assembled polystyrene nanosphere masks were realized by Langmuir-Blodgett techniques. For further variations in diameter and spacing of the Si nanotrucures, reactive ion etching of the polystyrene nanosphere masks is applied. As MACE processes always lead to etching induced surface defects in the resulting Si nanostuctures, suitable post-etching surface treatments are necessary. As a direct surface passivation process, the application of electrochemical functionalization by methyl groups is examined. Another approach is to remove the damaged surface of the Si nanostuctures by subsequent electrochemical oxidation and Si oxide dissolution. Finally, the influences of the nanostructured substrate and its different surface passivation are studied on hybrid solar cells with a thiophene/Si interface.