Dresden 2014 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 72: Quantum dots: Transport properties
HL 72.2: Talk
Wednesday, April 2, 2014, 15:15–15:30, POT 251
Resonant tunnelling structures for reducing the erase time in a quantum dot-based memory — •Ismail Firat Arikan1,2, Nathanael Cottet3, Tobias Nowozin1, Dieter Bimberg1, and Nurten Öncan2 — 1Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany — 2Department of Physics, Faculty of Science, Istanbul University, 34314 Vezneciler, Istanbul, Turkey — 3ICFP, Departement de Physique, Ecole Normale Superieure, Paris, France
A memory based on self-organized quantum dots (QDs) is a promising candidate to combine the individual advantages of both DRAM and Flash, such as a long storage time (years), a fast write time (ns) and a good endurance. While the results are promising for the write performance, a trade-off exists for the erase performance: If the localization energy of the QDs is increased to further increase the storage time, the erase time also increases due to the increased tunnelling barrier. The solution to eliminate this trade-off between storage and erase time is to use a superlattice structure which implements resonant tunnelling as erasing mechanism. The transparency of such a structure is designed in such a way that it can be switched between very high and very low values by applying a bias voltage. In this work, a scheme for designing such a superlattice structure is presented. The structures are then simulated by using a one-dimensional Poisson-Schrödinger Solver and the Non-Equilibrium Green Function's formalism. For simple structures, first measurements are presented.