Dresden 2014 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 78: Quantum dots: Preparation and characterization

HL 78.2: Talk

Wednesday, April 2, 2014, 16:45–17:00, POT 251

Atomic structure of InGaAs/GaAs quantum dots in a GaP(001) matrix — •Holger Eisele, Christopher Prohl, Andrea Lenz, Dominik Roy, Gernot Stracke, Andre Strittmatter, Udo W. Pohl, Dieter Bimberg, and Mario Daehne — Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin

Due to the comparably low lattice mismatch, GaP is a promising material for the direct integration of optical III-V-semiconductor applications into silicon-based technology. Therefore, the development of epitaxially grown nanostructures---like quantum dots---on GaP(001) substrates for opto-electronic devices is an interesting new task. Furthermore, In(Ga)As/GaP quantum dots are also promising for new nano-memory cells due to an expected high hole localization energy at the quantum dots, as compared with InAs/GaAs quantum dots, resulting in reasonable long storage times. In order to understand the growth and capping of quantum dots in this new material system, we analyzed InGaAs/GaAs/GaP nanostructures on the atomic scale, using scanning tunnelling microscopy (XSTM).