Dresden 2014 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 81: Poster: Energy materials incl. photovoltaics

HL 81.13: Poster

Wednesday, April 2, 2014, 17:00–20:00, P1

Impact of light soaking and dark annealing on the electronic properties and transient photoluminescence of Cu(In,Ga)Se2 thin-film photovoltaic solar cells and absorbers. — •Viktor Gerliz, Stephan Heise, Jörg Ohland, Jürgen Parisi, and Ingo Riedel — Carl von Ossietzky University of Oldenburg, Germany

Continuous light soaking (LS) at elevated temperature and dark annealing (DANN) can significantly affect the performance of Cu(In,Ga)Se2 (CIGSe) thin film solar cells. LS at T=90°C under white-light illumination results in improved cell performance due to evident increase of the open circuit voltage and doping concentration. The long-term dark annealing of devices reduces this effect while swapping between meta-stable and relaxed states appears to be more or less reversible. It can be anticipated that both conditioning procedures affect the recombination dynamics of the minority carriers. To investigate such dependence we performed time-resolved photoluminescence measurements (TRPL) using the time-correlated single-photon counting (TCSPC) technique. In this contribution we discuss the progressive change of the photoluminescence decay characteristics as obtained for light-soaked and annealed CIGSe solar cells and CIGSe/CdS heterostructures.