Dresden 2014 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 81: Poster: Energy materials incl. photovoltaics
HL 81.16: Poster
Mittwoch, 2. April 2014, 17:00–20:00, P1
Optical, Structural and Surface Properties Te added CIGSeTe Thin Films — •songül fiat1, Emin Bacaksiz2, Michael Kompitsas3, and Güven Çankaya4 — 1Dumlupinar University — 2Karadeniz Technical University — 3National Hellenic Research Foundation — 4Yildirim Beyazit University
The aim of this work was to study the dependence of the optical, structural and morphological properties of CuIn0.7Ga0.3(Se(1-x)Tex)2 (briefly CIGSeTe) thin films for three different stoichiometries (for x=0.0 x=0.4 and 1.0). The films have been deposited onto soda lime glass (SLG) substrates by the e-beam evaporation technique. The films showed high absorption and revealed optical band gaps ranging from 1,21-1,11 eV for x=0 and 1,15-1,09 eV for x=0.4 from as deposited to highest annealing temperature 525 °C and as last 1.05-1.00 eV from as deposited to highest annealed temperature 600 °C for x=1.0 amounts. The linear dependence of the lattice parameters as a function of Se and Te contents was examined. X-ray diffraction analyses showed that the films had the single phase chalcopyrite structure. The lattice parameters (a and c) varied linearly with the increase in Te content x from x=0.0 to x= 1.0. AFM maps have been analysed. and the relative elemental composition present in the deposited CIGSeTe films have been measured by using energy dispersive X-ray analysis (EDX).