Dresden 2014 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 81: Poster: Energy materials incl. photovoltaics
HL 81.8: Poster
Mittwoch, 2. April 2014, 17:00–20:00, P1
Surface passivation of Si by ZnO doped Al2O3 — •Thomas Schneider1, Johannes Ziegler1, Alexander N. Sprafke1, and Ralf B. Wehrspohn1,2 — 1Institute of Physics Martin-Luther-Universität Halle-Wittenberg, Heinrich Damerow-Str. 4, 06120 Halle, Germany — 2Fraunhofer Institute for Mechanics of Materials IWM, Walter-Hülse-Str. 1, 06120 Halle, Germany
The lifetime of the minority charge carriers in thin, high quality Si wafers is mainly limited by surface recombination processes[1]. Thin dielectric layers of Al2O3 deposited on the Si surface are known to provide a excellent surface passivation. In this work, ZnO is incorporated into thin Al2O3 films and the influence of the ZnO to Al2O3 ratio on the passivation quality is studied. The films are deposited by means of thermal atomic layer deposition on p-type Si. Different numbers of ZnO cycles are incorporated into an approximately 10 nm thick Al2O3 layer. The passivation quality is determined by lifetime measurements with the QSSPC method. For a certain ratio of ZnO in the Al2O3 an increase of the lifetime of the minority charge carriers occurred, indicating a enhanced passivation of the Si surface.
[1] A.G. Aberle, Prog. Photovolt: Res. Appl. 8(5), 473 (2000). doi:10.1002/1099-159X(200009/10)8:5⟨473::AID-PIP337⟩3.0.CO;2-D