Dresden 2014 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 81: Poster: Energy materials incl. photovoltaics

HL 81.9: Poster

Wednesday, April 2, 2014, 17:00–20:00, P1

Influence of a SiO₂ interlayer on AL₂O₃ passivated silicon wafers — •Johannes Ziegler¹, Thomas Schneider¹, Alexander N. Sprafke¹, and Ralf B. Wehrspohn^1,2 — ¹Institute of Physics Martin-Luther-Universität Halle-Wittenberg, Heinrich Damerow-Str. 4, 06120 Halle, Germany — ²Fraunhofer Institute for Mechanics of Materials IWM, Walter-Hülse-Str. 1, 06120 Halle, Germany

Silicon surfaces are exellently passivated by Al₂O₃ due to the chemical passivation of recombination active dangling bonds by saturation, as well as field effect passivation generated by a high density of fixed negative charges in the Al₂O₃. Therefore, it is used to reduce parasitic charge carrier recombination in silicon solar cells [1]. However silicon tends to form a layer of SiO₂ on its surface. In most cases, Al₂O₃ is deposited on an Si/SiO₂ interface [2]. Thus the thickness and growing conditions of the SiO₂ interlayer influences the passivation quality of the Si/SiO₂/Al₂O₃ passivation stack. The influence of differently wet-chemically grown SiO₂ interlayers in such passivation stack is investigated by effective minority carrier lifetime measurements.
[1] F. Werner, B. Veith, D. Zielke, L. Kühnemund, C. Tegenkamp, M.Seibt, R. Brendel, J. Schmidt, J. Appl. Phys. 109, 113701 (2011).doi:10.1063/1.3587227

[2] V. Naumann, M. Otto, C. Hagendorf, R.B. Wehrspohn, J. Vac. Sci.Technol., A 30, 04D106 (2012). doi:10.1116/1.4704601