Dresden 2014 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 82: Poster: Surfaces, interfaces and heterostructures (with O)
HL 82.3: Poster
Wednesday, April 2, 2014, 17:00–20:00, P1
Influence of surface treatment on NV centers in diamond — •Stefan Borgsdorf1, Lina Elbers1, Aniela Scheffzyk1, Daniel Laumann1, Christian Klump1, Andreas Kaivas1, Ulrich Köhler1, Dieter Suter2, and Frederico D. Brandao2 — 1Experimentalphysik IV, AG Oberflächen, Ruhr-Universität Bochum — 2Experimentelle Physik IIIA, TU Dortmund
Color centers in diamond, especially NV centers, are practical single photon emitters due to RT operation and candidates for applications in quantum computing. We present a setup for low energy implantation of NV centers near the surface possibly allowing electrical addressing. Furthermore, we survey the influence of different surface and bulk treatments on the diamond and its NV centers. To purify the diamonds we reduced the amount of natural NV centers in optical grade diamonds by heating up to 1500 °C in hydrogen. The luminous intensity could be reduced down to 1/8. The optical grade diamonds were used for first implantations with N15 in discrete lines. Further, electronic grade diamonds will be applied. To control the charge state of the NV centers, the surface was terminated by Hydrogen or Fluorine via a H2- and a CF4-Plasma, respectively. HREELS and AFM measurements were executed to study the surface after plasma treatment. Likewise, the influence of optical transparent passivation layers on the intensity and charge state are object of interest. Finally a UHV chamber is modified to implant directly under UHV conditions and to allow in situ spectroscopic access to the diamond samples.