Dresden 2014 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 83: Poster: Graphene (with MA/O)

HL 83.7: Poster

Wednesday, April 2, 2014, 17:00–20:00, P1

Characterization and transfer of 2D dichalcogenides produced by anodic bonding — •Philipp Nagler, Gerd Plechinger, Christian Schüller, and Tobias Korn — Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg, Germany

Atomically thin MoS₂ and WS₂ structures have attracted growing attention as promising 2D semiconductors. As monolayers, both materials exhibit a direct bandgap and therefore are suitable candidates for future opto-electronical devices. We produced singlelayer MoS₂ and WS₂ by means of anodic bonding. In this process, the material is bonded by electrostatic forces on a borosilicate glass substrate. Compared to mechanical exfoliation, this technique usually yields larger flakes. Anodic bonded MoS₂ flakes were characterized by Raman and photoluminescence (PL) spectroscopy. Performing low-temperature PL measurements, we observed similar behaviour as in SiO₂-supported MoS₂. Furthermore, PL measurements for anodic bonded WS₂ are presented. By applying the wedging transfer technique, we transferred anodic bonded monolayer WS₂ from the glass to a SiO₂ substrate. Additionally, using this method, heterostructures consisting of various 2D materials could be produced and characterized.