Dresden 2014 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 84: Poster: Electronic structure theory / Carbon (other than graphene) / Si, Ge, and SiC / III-V semiconductors (other than nitrides)
HL 84.13: Poster
Mittwoch, 2. April 2014, 17:00–20:00, P1
How to explain laser induced Si-->SiO2 electron injection at front and rear interfaces of a Si membrane? — •Per-Christian Heisel1, Wolfgang Paa1, and Herbert Stafast1,2 — 1Institute of Photonic Technology, Albert-Einstein-Str. 9, 07745 Jena — 2Faculty of Physics & Astronomy, Max-Wien-Platz 1, 07743 Jena
Electrical field induced second harmonic generation (EFISH) is well known for Si/SiO2 interfaces and typically measured in reflection [1]. EFISH in transmission was first shown with an external field applied to a 100 microns thick MOS structure [2]. The first comparison of EFISH in reflection and transmission was shown recently [3,4] using a 10 microns thick, naturally oxidized Si membrane. The rear EFISH signal (transmission) rises much faster than the front signal (reflection) and yields a larger steady state value. These findings essentially originate from differences in the laser induced electron injection from Si to SiO2. Their explanation is approached by different models like e. g. the image force model.
[1] G. Lüpke, Surf. Sci. Rep. 35, 77 (1999)
[2] O. A. Aktisipetrov et al., Opt. Lett. 19, 1450 (1994)
[3] G. P. Nyamuda, PhD thesis, University Stellenbosch, South Africa (2010)
[4] G. P. Nyamuda et al., Appl. Phys. B 104, 735 (2011)