Dresden 2014 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 84: Poster: Electronic structure theory / Carbon (other than graphene) / Si, Ge, and SiC / III-V semiconductors (other than nitrides)

HL 84.16: Poster

Mittwoch, 2. April 2014, 17:00–20:00, P1

Growth of GaAs nanowires on GaAs (111)B substrates induced by focused ion beam — •Rüdiger Schott, Sven Scholz, Dirk Reuter, Arne Ludwig, and Andreas D. Wieck — Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum

Semiconductor nanowires (NWs) are used as building blocks for a new generation of advanced devices intended for different applications in the field of nanoelectronics, nanophotonics and nanomechanics. NWs are near one-dimensional structures that typically have a high length-to-width ratio. This is the base of samples fascinating structural properties. Heterostructures of highly lattice mismatched materials can be combined without dislocations and the growth metastable phases, unattainable in bulk materials like wurtzite GaAs, can be made. We present focused ion beam (FIB) induced molecular beam epitaxy (MBE) grown single GaAs nanowires on GaAs (111)B substrates from site selectively deposited Au seeds. Structural and optical properties of the nanowires are investigated by secondary electron microscopy (SEM), transmission electron microscopy (TEM) and photoluminescence spectroscopy (PL).