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HL: Fachverband Halbleiterphysik

HL 84: Poster: Electronic structure theory / Carbon (other than graphene) / Si, Ge, and SiC / III-V semiconductors (other than nitrides)

HL 84.17: Poster

Mittwoch, 2. April 2014, 17:00–20:00, P1

Epitaxial growth of heterostructures on GaAs (111)A and GaAs (111)B substrates — •Julian Ritzmann, Arne Ludwig, Rüdiger Schott, Dirk Reuter, and Andreas D. Wieck — Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, Universitätsstr. 150, D-44780 Bochum, Germany

Heterostructures on (111)-oriented GaAs substrates are known for possibly high light emitting efficiency and tunable electron spin lifetimes by suppressing the Dyakonov-Perel relaxation. This offers a wide range for new and unique devices in the field of spintronics and -optics. The growth by molecular beam epitaxy on these surfaces is however rather challenging and only a limited range of growth parameters leads to structures of high crystal quality.
In this work we present the capabilities of MBE-grown AlGaAs and GaAs layers on (111)A and (111)B GaAs substrates without miscut. The samples exhibit reduced surface roughness and good electrical properties shown by atomic force and scanning electron microscopy and van-der-Pauw Hall measurements.