Dresden 2014 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 84: Poster: Electronic structure theory / Carbon (other than graphene) / Si, Ge, and SiC / III-V semiconductors (other than nitrides)

HL 84.18: Poster

Wednesday, April 2, 2014, 17:00–20:00, P1

Photo-modulated reflection spectroscopy of Ga(AsBi) bulk and quantum well structures — •Jan Kuhnert, Peter Ludewig, Kerstin Volz, and Sangam Chatterjee — Philipps-Universität Marburg, Marburg, Germany

Bismuth-containing structures based on GaAs are promising candidates for semiconductor lasers operating at telecom wavelength. By an incorporation of about 10% bismuth, this desired wavelength of 1550nm is reached. In this system the reduction of band gap is due to shifting of the valence bands rather than the conduction band. Besides the influence on the band gap, the spin orbit coupling is increased and the gap between the valence bands is increased[1]. This way, losses due to auger processes are reduced and high temperature efficiency is increased.To quantify the influence of bismuth concentration, we investigated multiple Ga(AsBi)/GaAs bulk samples with different Bi concentrations by room temperature photo-modulated reflection spectroscopy. In addition, to characterize confinement effects, a set of multi quantum well structures is investigated using the same technique. [1] Appl. Phys. Lett. 91, 051909, (2007)