Dresden 2014 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 84: Poster: Electronic structure theory / Carbon (other than graphene) / Si, Ge, and SiC / III-V semiconductors (other than nitrides)
HL 84.20: Poster
Wednesday, April 2, 2014, 17:00–20:00, P1
The influence of growth parameters on the phase composition and defect structure of InAs nanowires — •Anton Davydok1,2, Andreas Biermanns-Föth1, Emmanouil Dimakis3,4, Lutz Geelhaar3, and Ullrich Pietsch1 — 1Universität Siegen,Siegen, Germany — 2Im2np, Marseille, France — 3Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany — 4Helmholtz-Zentrum Dresden-Rossendorf (HZDR)
We presented the results of X-ray investigation of MBE grown InAs nanowires (NWs) onto silicon (111) substrate. It was found that InAs NWs preferentially grow in wurtzite phase but may contain a large number of stacking faults (SF). The aim of this work was to investigate the influence of various growth parameters as temperature, In-flux, V/III ratio etc.) on the structural phase composition. The density of SF has been evaluated from the FWHM of the (10i5) wurtzite Bragg reflection which is particularly sensitive to SF inclusions, followed by numerical simulations using a model of a statistical distribution of SF in an ensemble of many nanowires. It has been found that nearly independent from the choice of growth parameters a low SF density is found in the initial phase of NW growth. With increasing growth time the increase of SF density can be described by a function SF_den=A*exp(-L/d)+m, with A=0.37, d=-752 and m=0.41. The SF density increases fast in the beginning but saturates for longer growth time.