Dresden 2014 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 84: Poster: Electronic structure theory / Carbon (other than graphene) / Si, Ge, and SiC / III-V semiconductors (other than nitrides)
HL 84.22: Poster
Wednesday, April 2, 2014, 17:00–20:00, P1
Structural properties of AlGaP films on GaP grown by gas-source molecular-beam empitaxy. — •Shabnam Dadgostar1, Emad Hameed Hussein1, W. Ted Masselink1, Fariba Hatami1, Jan Schmidtbauer2, and Torsten Boeck2 — 1Departmant of physics, Humboldt university of Berlin. Newtonstr. 15, 12489 Berlin. Germany. — 2Leibniz- Institute für Kristallzüchtung, Max-Born-Str. 2, 12489 Berlin, Germany
High-Q photonic crystal cavities with working range in visible wavelengths can be realized based on GaP membranes. Such membranes can be prepared as a single crystal using gas-source molecular-beam epitaxy with a sacrificial layer of AlGaP. High quality factor of photonic crystal cavity is limited by crystal quality of GaP membrane which depends on AlGaP sacrificial layer crystal quality. We have studied the effects of growth temperature and PH3 flux on the crystal quality of AlGaP layer. For our applications we used AlGaP structures with thickness of 1.0 μm and Al content of 85%. Both high-resolution x-ray diffraction and AFM measurements indicate that dislocation and oval-defects are minimized for growth temperature of 490oC and PH3 flux of 2.7 sccm.