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HL: Fachverband Halbleiterphysik
HL 84: Poster: Electronic structure theory / Carbon (other than graphene) / Si, Ge, and SiC / III-V semiconductors (other than nitrides)
HL 84.3: Poster
Wednesday, April 2, 2014, 17:00–20:00, P1
Depth-Localization of Nitrogen-Vacancy-Centers in Diamond with Subwavelength-Accuracy — •Andreas Häußler and Fedor Jelezko — Institut für Quantenoptik, Universität Ulm, Albert-Einstein-Allee 11, 89081 Ulm , Germany
Nitrogen-Vacancy (NV) color centers in diamond are interesting candidates for several applications, e.g. magnetic sensing in solid state. In certain cases it is crucial to know the exact position of the center below the surface.
In our work, we use a simple confocal microscope and measure both the reflected light from the surface and the emitted light of the NV to determine the depth of the color center. Suitable calibration measurements and statistical evaluation of the data can then lead to a much higher precision than the point spread function of the microscope down to nanometer accuracy.