Dresden 2014 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 89: Metamorphic structures: Bringing together incompatible materials I (Focus session with DF)

HL 89.2: Topical Talk

Thursday, April 3, 2014, 10:00–10:30, POT 251

Two types of buffer layer for the growth of GaN on highly lattice mismatched substrates and their impact on the development of sustainable systems — Tadashi Mitsunari¹, Koji Okuno¹, Yoshio Honda¹, Shigeyasu Tanaka², and •Hiroshi Amano^1,3 — ¹Department of Electrical Engineering and Computer Science, Nagoya University — ²EcoTopia Science Institute, Nagoya University — ³Akasaki Research Center, Nagoya University

There are two types of buffer layer for the growth of commercially available GaN-based blue LEDs on a sapphire substrate. One is the low-temperature deposited AlN or GaN buffer layer and the other is the sputter-deposited AlN buffer layer. In both cases, deposition condition, thickness and the annealing condition are critical for the fabrication of high performance blue LEDs. In this presentation, detailed study on the deposition and growth process of the low-temperature deposited AlN buffer layer and the following GaN growth will be discussed. We applied the sputter-deposited AlN buffer layer for the growth of GaN on Si. Details of the quality of GaN on a sputter-deposited AlN layer will be shown.