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HL: Fachverband Halbleiterphysik
HL 95: Polaritons
HL 95.3: Vortrag
Donnerstag, 3. April 2014, 12:00–12:15, POT 051
Determination of operating parameters for a GaAs-based polariton laser — •Johannes Schmutzler1, Franziska Wishahi1, Marc Aßmann1, Jean-Sebastian Tempel1, Sven Höfling2, Martin Kamp2, Alfred Forchel2, and Manfred Bayer1 — 1Experimentelle Physik 2, Technische Universität Dortmund, D-44221 Dortmund, Germany — 2Technische Physik, Physikalisches Institut, Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Universität Würzburg, D-97074 Würzburg, Germany
We report on a systematic study of the phase transitions to polariton condensation and further to cavity lasing in a GaAs-based microcavity with respect to exciton-cavity detuning and lattice temperature. Using far field and time-resolved spectroscopy we identify two different modes which are attributed to polariton condensation and cavity lasing, respectively. Thereby we can determine the parameterspace in which polariton condensation can be achieved and the corresponding variation of threshold power. For the investigated sample, we found a lower bound of −12 meV for the exciton-cavity detuning and an upper bound of 90 K for the lattice temperature.[1]
[1] J. Schmutzler et al., Applied Physics Letters 102, 081115 (2013)