Dresden 2014 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 95: Polaritons
HL 95.6: Vortrag
Donnerstag, 3. April 2014, 12:45–13:00, POT 051
Low dimensional GaAs/Air vertical microcavity lasers — •Jonas Geßler1, Theresa Steinl1, Arkadiusz Mika1,2, Julian Fischer1, Jan Misiewic2, Sven Höfling1, Christian Schneider1, and Martin Kamp1 — 1Technische Physik, Universität Würzburg, Am Hubland, D-97074, Würzburg, Germany — 2Wroclaw University of Technology, 27 Wybrzeze Wyspiańskiego St, 50-370 Wrocław, Poland
Microcavities consisting of gallium arsenide (GaAs)/ aluminum gallium arsenide (AlGaAs) distributed Bragg reflectors have been the platform for many pioneering light matter interaction studies in semiconductors. GaAs/air microcavities that can be fabricated by selective etching of layers with high Al-content have the major advantage that they show a very large index contrast. This enables smaller mode volume by decreasing the effective cavity length and to obtain the same quality factors with a notably smaller number of mirror pairs. Our cavity design is promising to reach the strong coupling regime and demonstrate polariton formation in the GaAs/ air microresonator.
We report on the fabrication of GaAs/ air distributed Bragg reflector microresonators with indium gallium arsenide quantum wells. The structures are studied via momentum resolved photoluminescence spectroscopy which allows us to investigate a pronounced optical mode quantization of the photonic dispersion. Via analytical simulations we extract the lateral physical extensions of our microcavity from the energetic distance between the discrete states. Power dependent investigations of our structures revealed clear evidence of photon lasing.