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HL: Fachverband Halbleiterphysik

HL 97: Semiconductor laser II: Microcavities and quantum-dot laser

HL 97.6: Vortrag

Donnerstag, 3. April 2014, 16:45–17:00, POT 051

1.55 μm InAs/InP(100) Based Quantum Dot Lasers for High-Speed Optical Communication — Vitalii Ivanov¹, •Vitalii Sichkovskyi¹, Florian Schnabel¹, Anna Rippien¹, David Gready², Gadi Eisenstein², and Johann Peter Reithmaier¹ — ¹Institute of Nanostructure Technologies and Analytics, CINSaT, University of Kassel, Heinrich-Plett-Str. 40, D-34132 Kassel, Germany — ²2Department of Electrical Engineering, Technion, Haifa 32000, Israel

Self-organized InAs/InP quantum dot systems are promising candidates for telecommunication applications at 1.55 μm. Here we report on the latest development of high-speed directly modulated 1.55 μm lasers utilizing recently developed high-density round-shaped InAs quantum dots (QDs) as active material. The laser structures were specially optimized for high-speed operation using a unique spatially resolved model. In particular, the waveguide thickness is significantly reduced down to 100 nm on each side of the active region in order to minimize the carrier transport time. Static and dynamic properties of ridge waveguide lasers with ridge widths of 2 μm and relatively short cavity lengths of 275 μm to 350 μm were investigated. Due to the high modal gain of 70 cm-1 for lasers consisting of 6 QDs layers in the active region, 275 μm long devices are lasing at ground state up to 50 °C. Such lasers exhibit new record values in direct digital modulation of 22 GBit/s with a clear open eye.