Dresden 2014 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 97: Semiconductor laser II: Microcavities and quantum-dot laser

HL 97.7: Talk

Thursday, April 3, 2014, 17:00–17:15, POT 051

InAs/InP based quantum dots laser with high gain at 1.55 µm emission wavelength — •Saddam Banyoudeh¹, Johann Peter Reithmaier¹, Christian Gilfert¹, Vitalii Ivanov¹, Vitalii Sichkovskyi¹, David Gready², and Gadi Eisenstein² — ¹Technische Physik, Institute of Nanostructure Technologies and Analytics, Universität Kassel, 34132 Kassel, Germany — ²Technion - Israel Institute of Technology, Haifa 32000, Israel

The Self-organized InAs/InP(100) quantum dot (QD) systems are promising canidates for the future telecommunication applications at 1.55 µm. Here we report on the recent advances in the performance of 1.55 µm QD laser, which allow to digital modulation at 22GBit/s with a 3 dB on/off ratio .The strong impact of different parameters on the dynamic proparties of directed modulated laser related to the QD material itself and the the laser design were investigated. The grown laser structure by molecular beam epitaxy consists of 100 nm waveguide layers composed of In0.528Al0.238Ga0.234As in which the InAs QD layers QD laser embedded. The cladding is formed by a 300 nm In0.523Al0.477As layer, 200 nm InP buffer layer and the InPsubstrate on the n-side while 300 nm thick In0.523Al0.477As and 1.7 µm InP layers are deposited for the p-cladding, re-spectively. A highly p-doped 200 nm thick In.532Ga.468Aslayer serves as p-contact. As active region a stacked QD are used, which emit around 1.55 µm with a high internal modal gain of 10 cm-1 per active layer.