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KR: Fachgruppe Kristallographie

KR 12: Functional Materials - Analysis with EBSD, X-Ray Kossel Diffraction and Related Methods (MI jointly with KR)

KR 12.3: Vortrag

Donnerstag, 3. April 2014, 10:15–10:30, MER 02

Strain inhomogeneities in epitaxial BaFe₂As₂ thin films measured by cross correlation electron backscatter diffraction — •Paul Chekhonin¹, Jan Engelmann², Bernhard Holzapfel², Carl-Georg Oertel¹, and Werner Skrotzki¹ — ¹Institut für Strukturphysik, Technische Universität Dresden — ²Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden

Epitaxial thin films of strained BaFe₂As₂ have been produced by pulsed laser deposition on a spinel substrate with an iron buffer layer. Using the cross correlation electron backscatter diffraction technique in a scanning electron microscope, relative measurements of very small strains and disorientations are possible. From electron backscatter diffraction pattern obtained on the BaFe₂As₂ layer partially strain relaxed areas were measured. Additionally, strain inhomogeneities and disorientations on length scales of few 100 nm and smaller have been detected.