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MA: Fachverband Magnetismus
MA 28: Magnetic Materials I
MA 28.1: Vortrag
Mittwoch, 2. April 2014, 15:00–15:15, HSZ 04
Thickness and strain dependent electric transport in Sr2IrO4 thin films — •chengliang lu1, dietrich hesse1, and marin alexe1,2 — 1Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany — 2Department of Physics, Warwick University, Coventry CV4 7AL, United Kingdom
Sr2IrO4, which is highly analogous to the p-wave superconductor Sr2RuO4 and Fermi liquid metal Sr2RhO4 in the crystalline structure, is an unexpected weak ferromagnetic insulator. The cooperation of strong spin-orbit coupling (~0.5 eV) and on-site Coulomb repulsion is responsible for the insulating ground state. Recently, a giant magnetoelectric effect and a lattice-driven magnetoresistance were evidenced in Sr2IrO4 bulk single crystals, and the magnetic field modulated Ir-O-Ir bond angle was proposed to be the origin, which suggests a high sensitivity of the physical properties of Sr2IrO4 to the lattice modulation. Here we investigate the thickness and strain dependent electric transport behavior in Sr2IrO4 thin films grown on various substrates. The electric transport of all samples can be well fitted by the variable-range-hopping model. Interestingly, the magnetoresistance behavior of the films is distinct from the bulk counterpart, which implies the strong coupling of spin, lattice, and orbit in Sr2IrO4.