Dresden 2014 – scientific programme

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MA: Fachverband Magnetismus

MA 42: Magnetic Materials III

MA 42.7: Talk

Thursday, April 3, 2014, 16:45–17:00, HSZ 04

Small damping parameters in Co₂FeSi and Fe₂CoSi films — •Christian Sterwerf¹, Markus Meinert¹, Jan-Michael Schmalhorst¹, Behrouz Khodadadi², Soumalya Paul², Matthias Buchmeier², Claudia Mewes², Tim Mewes², and Günter Reiss¹ — ¹Thin Films and Physics of Nanostructures, Department of Physics, Bielefeld University, 33501 Bielefeld, Germany — ²Department of Physics and Astronomy/MINT Center, University of Alabama, Tuscaloosa, Alabama 35487, USA

Co and Fe based Heusler compounds are promising candidates for spintronic devices as they offer high Curie temperatues and high spin polarizations.

In an earlier publication we presented sputtered Co_2−xFe_1+xSi (0 ≤ x ≤ 1) films with good crystalline ordering and high tunnel magnetoresistance (TMR) ratios in magnetic tunnel junctions (MTJs) with a Co_2−xFe_1+xSi electrode. [1]

Magnetization relaxation and the anisotropy of the films were determined by broadband ferromagnetic resonance (FMR) and magnetooptical Kerr effect (MOKE) measurements. With the help of a broadband FMR and the consideration of the extrinsic linewidth, very small damping parameters were found. The damping parameter for Co₂FeSi is 0.002.

[1] Sterwerf, Christian, et al. "High TMR Ratio in Co₂FeSi and Fe₂CoSi based Magnetic Tunnel Junctions." IEEE Transactions on Magnetics 49.7 (2013): 4386.