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MA: Fachverband Magnetismus

MA 50: Topological Insulators (jointly with DS,HL,O,TT)

MA 50.9: Vortrag

Freitag, 4. April 2014, 11:45–12:00, HSZ 04

Sputter Deposition of Half-Heusler Topological Insulators — •Benedikt Ernst, Daniel Ebke, Stanislav Chadov, Gerhard Fecher, and Claudia Felser — Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Str. 40, 01187 Dresden, Germany

Heusler compounds have exhibited manifold physical properties in the recent years and attracted a lot of interest in the field of spintronic applications due to their half-metallic properties. Recently, a topological insulating state has been predicted by theory for some of these compounds.

In this work, we have prepared Heusler materials such as LaPdBi and LaPtBi for which a topological insulating behavior was predicted. Co-deposition by DC- and RF magnetron sputtering was used to prepare corresponding thin films. To realize an epitaxial film growth in the crystallographic C1_b structure on MgO-substrates, a buffer layer was applied and optimized. Initial transport properties will be discussed with regard to the film composition and the crystallographic properties.