Dresden 2014 – scientific programme

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MA: Fachverband Magnetismus

MA 55: Poster II

MA 55.108: Poster

Friday, April 4, 2014, 10:30–13:30, P2

Thin film preparation of the topological insulator Bi₂Te₃ by co-sputtering — •Mike Gotzmann¹, Christian Sterwerf¹, Jan-Michael Schmalhorst¹, Günter Reiss¹, and Gregor Mussler² — ¹Thin Films and Physics of Nanostructures, Bielefeld University, Germany — ²Peter Grünberg Institute Semiconductor Nanoelectronics (PGI-9), Jülich, Germany

Topological insulators are a new class of promising materials for spintronic devices. Due to their bulk band gap, they show an ordinary insulating behavior in the bulk, whereas on the surface the conducting properties and in particular the spin direction, are conserved.[1]

Thin epitaxial Bi₂Te₃ films were prepared by dc and rf magnetron co-sputtering and molecular beam epitaxy from elemental targets onto various substrates such as BaF₂, Si and Al₂O₃. To achieve a high bulk resistivity, the films were doped with Sn. The crystallographic properties of the Bi₂Te₃ films were investigated by x-ray diffraction and reveal a high degree of structural order. Resistance measurements were performed down to 15K to determine the electronic behavior of the films.

[1] M. Hasan and C. Kane (2010). Reviews of Modern Physics, 82(4), 3045–3067.