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Dresden 2014 – scientific programme

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MA: Fachverband Magnetismus

MA 55: Poster II

MA 55.111: Poster

Friday, April 4, 2014, 10:30–13:30, P2

Thin films of the topological Half-Heusler compound YPtBiAlexander Kronenberg, Hans Joachim Elmers, Mathias Kläui, and •Martin Jourdan — Institut für Physik, Johannes Gutenberg-Universität Mainz, Staudingerweg 7, 55128 Mainz

Half-Heusler materials of the family LaPtBi are predicted to show 3D-topological order [1] i.e. to present topologically protected electronic surface states. Additionally, according to band structure calculations, a bulk band gap can be opened around the Fermi level by lateral strain [2]. The planned in situ spin-resolved ARUPS on epitaxial thin films is the ideal tool to investigate the electronic structure including surface states of thin films of this. We present first results on the preparation of thin films of the YPtBi compound. Crystalline quality as checked by x-ray diffraction and morphology investigated by atomic force microscopy are compared for films deposited by RF-magnetron sputtering from a stoichiometric compound target as well as from three separate elementary sputtering sources. [1] Chadov et al. Nature Materials 9, 541 (2010) [2] Zhang et al. Appl. Phys. Lett. 99 071901 (2011)

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