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MA: Fachverband Magnetismus
MA 55: Poster II
MA 55.60: Poster
Freitag, 4. April 2014, 10:30–13:30, P2
Growth modes and epitaxy of FeAl thin films on a-cut sapphire prepared by ion beam assisted and pulsed laser deposition — •Xiang Yao1, Ulf Wiedwald1,2, Moritz Trautvetter1, and Paul Ziemann1 — 1Institut für Festkörperphysik, Universität Ulm, Albert-Einstein-Allee 11, 89069 Ulm, Germany — 2Fakultät für Physik, Universität Duisburg-Essen, Lotharstraße 1, 47057 Duisburg, Germany
FeAl in the B2 phase shows paramagnetism. Thin films prepared at ambient temperature, however, usually exhibit the A2 phase, accompanied by ferromagnetism. We investigate this structural phase transition by subsequent annealing in highly textured films. FeAl thin films are grown on a-cut Al2O3 substrates using ion beam assisted sputter deposition (IBAD) and pulsed laser deposition (PLD) at 300K. In all cases, a strong [110] out-of-plane texture exists while in-plane orientations differ significantly as revealed by XRD pole figures. IBAD-grown films possess at least three in-plane orientations while PLD-grown films show high quality epitaxial relation with Al2O3 substrate. The formation of the two configurations is attributed to the existence of an intermediate metastable crystalline orientation, as concluded from the non-assisted sputter deposition at elevated temperatures. Magnetic properties were tracked by SQUID-magnetometry. For IBAD-grown films, we find an abrupt transition to paramagnetic behavior at 300 K after annealing at TA = 300∘C for 1h while PLD-grown films show a gradual decrease for TA up to 500∘C. We thank the Baden-Württemberg Stiftung for financial support.