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MA: Fachverband Magnetismus

MA 55: Poster II

MA 55.62: Poster

Freitag, 4. April 2014, 10:30–13:30, P2

Preparation and characterisation of TiN thin films — •Alessia Niesen¹, Manuel Glas¹, Daniel Ebke², Jan Schmalhorst¹, and Günter Reiss¹ — ¹Thin Films and Physics of Nanostructures, Bielefeld University, Germany — ²Max-Planck-Institute for Chemical Physics of Solids, Dresden, Germany

The preparation of TiN thin films was investigated. The thin films were prepared by RF magnetron sputtering in an UHV sputtering system. To achieve epitaxial (001)-oriented thin films, MgO (001) and SiO₂ (001) substrates were used. During the deposition, the substrate temperature ranged between room temperature and 900^∘C. X-ray diffraction (XRD) and reflection (XRR) measurements were carried out to determine the crystallographic and surface properties. In addition, atomic force measurements (AFM) were performed to verify the XRR data. Samples deposited on MgO substrate showed a crystalline ordering over the full deposition temperature range, whereas no visible crystallinity was seen for thin films sputtered on SiO₂ substrates. The surface roughness decreases with increasing deposition temperature for samples on MgO. Furthermore the out-of-plane lattice constant and the resistivity reached the theoretical predicted values of 4.242 Å and 20  µ Ω cm (300 K) with increasing deposition temperature. The in-situ deposition on heated substrate will be compared to an ex-situ annealing process. Finally, the suitability of TiN as seed layer for ferromagnetic materials like Iron and Heusler compounds, e. g. Co₂FeAl or Mn_3−xGa, will be discussed.