Dresden 2014 – scientific programme
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MI: Fachverband Mikrosonden
MI 3: Analytical Transmission Electron Microscopy and Atom Probe Tomography
MI 3.2: Talk
Tuesday, April 1, 2014, 10:00–10:30, MER 02
New Applications in Atom Probe Tomography — •H.-Ulrich Ehrke — CAMECA, München
Atom probe tomography (APT) is known as a method for element and isotope analysis with sub-nm resolution in 3D. Innovations in APT and focused ion beam based sample preparation have enabled new applications including semiconductors and insulating materials.
Variability in metal-oxide-semiconductor (MOS) transistors has substantially increased due to continuous decreasing feature size. APT can provide elemental mapping in MOS transistors, and correlate such electrical performance with dopant concentration, showing that threshold voltage in 65 nm-node n-MOS transistors is positively correlated with the channel dopant concentration.
In geological materials, APT is now providing unique information for understanding the thermal history and mechanisms of mineral reaction, mineral exchange and radiation damage. In zircon crystals, 207Pb/206Pb ratios for nm-scale domains (< 20 000 atoms Pb) average 0.17 ± 0.04 for a 2.4 Ga zircon and 0.43 ± 0.14 for a 4.0 Ga zircon in agreement with the ratios measured by SIMS over much larger volumes (100’s µ m3) 0.1684 and 0.4269, respectively).
In metallic glass research, the glass forming ability of high Fe-content glasses for low-cost transformer applications is improved by small copper additions. Fe76−xC7.0Si3.3B5.0P8.7Cu0.7 glass phase-separates into α-Fe precipitates, ultrafine spheroidal є-Cu-rich precipitates, silicon-depleted Fe3(P,B,C), and Fe3C after thermal annealing for 30 min. at 729K.