Dresden 2014 – wissenschaftliches Programm
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MI: Fachverband Mikrosonden
MI 3: Analytical Transmission Electron Microscopy and Atom Probe Tomography
MI 3.4: Vortrag
Dienstag, 1. April 2014, 10:45–11:00, MER 02
Microstructural Investigation of Recombination Active Defects in Multicrystalline Silicon Solar Cells — •Dominik Lausch1, Angelika Hähnel2, Martina Werner1, Jan Bauer2, Otwin Breitenstein2, and Christian Hagendorf1 — 1Fraunhofer Center for Silicon Photovoltaics, Walter-Hülse-Str. 1, 06120 Halle, Germany — 2Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany
The focus of this work will be on the microstructural investigation of different types of defects in mc-Si solar cells introduced in a previous publication. It is shown that defect types observed on a macroscopic scale could be directly related to structures on a microscopic scale by using advanced and newly applied microstructural microscopy methods. One defect type could be clearly correlated to iron precipitates located at defect structures of the underlying wafer by TEM analysis. To discuss the physical behaviour at the different defect classes temperature dependent EBIC measurements have been performed. Based on these results a model for the different classified types will be proposed explaining the observed recombination and prebreakdown behavior.The knowledge obtained can be reversibly interconnected to the macroscopic investigation on an industrial level to work on a solution to avoid these problems.