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MM: Fachverband Metall- und Materialphysik

MM 34: Poster Session

MM 34.35: Poster

Dienstag, 1. April 2014, 18:00–20:00, P4

Scanning Transmission Electron Tomography on three-dimensional defects in semiconductor heterostructures — •Michael Niehle and Achim Trampert — Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin

Shrinking structures incorporated into opto-electronic devices require an understanding of structure-property relations on a scale of only a few nanometers. In this context, the interest in three-dimensional (3D) structures of crystal defects is growing as their detailed influence on device functionality has to be considered. The combination of scanning transmission electron microscopy (STEM) with tomography allows for an investigation of the defects' 3D structure on a respective length scale. We present the application of STEM tomography on 3D objects embedded in GaSb based semiconductor heterostructures grown on Si substrates. The unique possibility to characterize the complex morphology in great detail is demonstrated. Challenges to apply STEM tomography as a routine tool in materials sciences are discussed with respect to materials comprising elements with a rather high atomic number. Strategies to complement investigations by conventional TEM techniques are sketched.