Dresden 2014 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 17: Semiconductor Substrates
O 17.13: Vortrag
Montag, 31. März 2014, 19:00–19:15, PHY C 213
Surface characterization of arsenic terminated Si(111) substrates pre-pared in MOVPE for III-V nanowire solar cells — •Weihong Zhao1, Agnieszka Paszuk1, Matthias Steidl1, Sebastian Brückner1, Oliver Supplie1, Anja Dobrich2, Peter Kleinschmidt1,3, and Thomas Hannappel1,2,3 — 1Technische Universität Ilmenau, Institut für Physik, Fachgebiet Photovoltaik, D-98684 Ilmenau — 2Helmholtz-Zentru Berlin, Institut für Solare Brennstoffe und Energiespeichermaterialien, D-14109 Berlin — 3CiS Forschungsinstitut für Mikrosensorik und Photovoltaik, D-99099 Erfurt
III-V nanowires grown on Si(111) substrates by metal-organic vapor phase epitaxy (MOVPE) enable a promising new solar cell concept meeting the demands of high-quality-low-cost photovoltaics. GaP buffer layers grown on Si(111) substrates represent suitable quasi-substrates since GaP is almost lattice-matched to Si. Apparently, preparation of atomically flat Si (111) surfaces is an essential step for adjacent GaP het-ero-epitaxy. However, little is known about preparation and surface prop-er-ties of Si(111) surfaces in MOVPE with H2 ambient. A contamination-free transfer system enabled us to study the MOVPE prepared surfaces with numerous UHV based surface science tools. A dedicated wet-chemical pretreatment is crucial to obtain atomically flat Si(111) surfaces. Varying the Si(111) surface preparation could control the polarity of the adjacent GaP layer. With the confirmation of FTIR, STM and LEED, we successfully established a controlled arsenic termination procedure during the epitaxy.