Dresden 2014 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 17: Semiconductor Substrates
O 17.2: Vortrag
Montag, 31. März 2014, 16:15–16:30, PHY C 213
Simultaneous nc-AFM/STM characterization of subsurface defects on B:Si(111)-√3x√3 surface — •Evan Spadafora1, Jan Berger1, Pingo Mutombo1, Mykola Telychko1, Martin Ondracek1, Martin Svec1, Zsolt Majzik1, Alastair Mc Lean2, and Pavel Jelinek1 — 1Institute of Physics, Academy of Sciences of the Czech Republic, Prague, Czech Republic — 2Department of Physics, Queen’s University, Kingston, Ontario, Canada
B:Si(111)-√3x√3 surface has gained a lot of interest in surface science, due to its prominent electronic and structural properties. Compared to bare silicon surface, this system has reduced chemical reactivity, which makes it a suitable candidate for deposition of molecular complexes without a risk of their decomposition. Here we will report combined nc-AFM/STM measurements using qPlus sensor with atomic resolution of the B:Si(111)-√3x√3 surface supported by total energy DFT calculations. STM reveals slight modulation of the tunneling current over surface area, which we attributed to presence of subsurface boron defects. We combine KPFM and lock-in STS measurements with large-scale DFT calculations to characterize position of boron subsurface defects and their influence on surface electronic structure.