Dresden 2014 – scientific programme
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O: Fachverband Oberflächenphysik
O 17: Semiconductor Substrates
O 17.3: Talk
Monday, March 31, 2014, 16:30–16:45, PHY C 213
In situ Scanning Tunneling Microscopy investigation of layered superlattices [(VSe2)n]1.06[(TaSe2)n] — •Pavel Shukrynau1, Ryan Atkins2, Dave C. Johnson2, and Michael Hietschold1 — 1Institute of Physics, Technische Universität Chemnitz, Reichenhainer Straße 70, D-09107 Chemnitz, Germany. — 2Materials Science Institute and Chemistry Department, University of Oregon, Eugene, Oregon 97403, USA
Variable Temperature Scanning Tunneling Microscopy (VT STM) was used to investigate local structural and electronic properties of the cleaved surface of [(VSe2)n]1.06[(TaSe2)n] layered compound. The original uppermost layer dissipates into small domains of 50x50 nm in size or more. In a region where three domains are in contact, a small triangular area with a side up to 5 nm is usually found, exhibiting a dark depression. The detailed inspection of the interior of the domain reveals a local ordering in a hexagonal-like pattern with rare inclination of surface defects. The observed structure is somehow similar to those obtained previously on other transition metal-chalcogenide surfaces. We were not able to identify unambiguously the chemical identity of the surface layer in STM scans. However, tunneling spectroscopy measurements distinctly show the dominance of the metal atoms in the topmost layer rather than the chalcogen ones.