Dresden 2014 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
O: Fachverband Oberflächenphysik
O 20: Nanostructures at Surfaces II
O 20.8: Vortrag
Montag, 31. März 2014, 17:45–18:00, WIL B321
STM-induced Doping on Si(553)-Au — •Ingo Barke1, Stefan Polei1, Paul C. Snijders2, Steven C. Erwin3, Franz J. Himpsel4, and Karl-Heinz Meiwes-Broer1 — 1University of Rostock, Institute of Physics, 18051 Rostock, Germany — 2Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA and Department of Physics and Astronomy, The University of Tennessee, Knoxville, Tennessee 37996, USA — 3Center for Computational Materials Science, Naval Research Laboratory, Washington, DC 20375, USA — 4Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
One-dimensional systems are notoriously difficult to dope because the dopant atoms interrupt the continuity of the quantum wires. Here we propose an alternative route based on transient doping, where charge injection from the tip of a scanning tunneling microscope drives the quasi one-dimensional system Si(553)-Au into an excited structural phase [1]. Time-dependent measurements enable access to the system's dynamics revealing rapid fluctuations due to a competition between excitation and decay. The current-dependent lifetimes hint at a barrierless decay of the excited (i.e. doped) state, letting the system behave like an optically excited molecule in close analogy to an excimer.
[1] Polei et al., PRL 111, 156801 (2013).