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O: Fachverband Oberflächenphysik
O 36: Posters: Bio/organic Molecules on Surfaces, Graphene, Solid/liquid interfaces, Metal Substrates, Electronic Structure Theory
O 36.44: Poster
Dienstag, 1. April 2014, 18:30–22:00, P1
AFM and Raman investigations of epitaxial graphene nanoribbons — •Malte Halbauer1, Jens Baringhaus1, Christoph Neumann2, André Müller2, Christoph Stampfer2, and Christoph Tegenkamp1 — 1Leibniz Universität Hannover, Institut für Festkörperphysik, 30167 Hannover, Germany — 2JARA-FIT and II. Institute of Physics A, RWTH Aachen University, 52074 Aachen, Germany
The synthesis of graphene nanoribbons (GNR) with well-oriented edges on a wafer-scale is a challenging task for the development of graphene based devices. Lithographic processing of graphene leads to a high amount of defects especially at the edges which destroy easily envisaged properties, e.g. ballistic edge channels. Hence, a self-organized growth of graphene nanoribbons is highly desirable. For this purpose we use the selective graphitization of refacetted SiC mesa structures. In order to reveal ideal growth parameters, the annealing processes have been studied and monitored by AFM as well as Raman spectroscopy. All heating steps have been performed in a face-to-face resistive heater. While AFM provides inside into the morphology of the mesa and facet structure, EFM has been used to record the local work function of the surface which is indicative for a selective growth of graphene nanostructues. The results correlate nicely with mappings of the 2D Raman signal indicating a successful growth of graphene nanoribbons. Best GNR structures have been obtained by annealing to 1200 ∘C for 20 min. For longer annealing times debunching of the initial MESA structure has been found as well as graphitization in between the ribbons.