Dresden 2014 – scientific programme
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O: Fachverband Oberflächenphysik
O 37: Posters: Plasmonics, Electronic Structure and Spin-Orbit Interaction, Semiconductor and Insulator Surfaces, Nanostructures
O 37.100: Poster
Tuesday, April 1, 2014, 18:30–22:00, P2
Characterisation of Boron-doped Silicon Nanowires — •Stefan Weidemann1, Manfred Ramsteiner2, Anna Mogilatenko3, Klaus Rademann4, and Saskia F. Fischer1 — 1Neue Materialien, Institut für Physik, Humboldt-Universität zu Berlin, 12489 Berlin, Germany — 2Paul-Drude-Institut für Festkörperelektronik, 10117 Berlin, Germany — 3Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany — 4Nanostructured Materials, Institut für Chemie, Humboldt-Universität zu Berlin
Nanostructures of silicon possess a high surface to volume ratio and reveal new intrinsic properties like decreased thermal conductivity [1], which make them interesting for catalytic applications and electronic devices. Measuring simultaneously thermal and electronic transport properties of individual, structurally characterised, silicon nanowires still remains a challenge. Here we prepare silicon nanowires by the two-step metal-assisted chemical etching (MACE) [2].
In dependence of the boron doping concentration we obtain nanowires with lengths up to 110 µm (undoped Si, ρ > 1 kΩcm), 90 µm (medium doped, ρ = 14 − 23 Ωcm) and about 40 µm (highly doped Si, ρ < 0.01 Ωcm), with smooth, rough and porous surfaces, respectively. Fabrication on wafer scale is feasible. Surface and structural properties of nanowire ensembles and individual nanowires are investigated by scanning and transmission electron microscopy and Raman spectroscopy.
1A. I. Hochbaum et al., Nature 451, 163 (2008)
2Z. Huang et al., Adv. Mater., 23, 285-308 (2011)