Dresden 2014 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 37: Posters: Plasmonics, Electronic Structure and Spin-Orbit Interaction, Semiconductor and Insulator Surfaces, Nanostructures
O 37.48: Poster
Dienstag, 1. April 2014, 18:30–22:00, P2
Temperature-dependent scanning tunneling microscopy of Se-doped IrTe2 — •Matthias Vogt1, Tobias Mauerer1, Pin-Jui Hsu1, Weida Wu2, and Matthias Bode1 — 1Physikalisches Institut, Experimentelle Physik II, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany — 2Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA
We present variable-temperature scanning tunneling microscopy (STM) measurements of cleaved IrTe2−xSex (x=0.5). A charge modulation period q = 1/6 is observed at room temperature, 50 K, and 4 K. This observation is in accordance with the previously reported transition from a polymerized state above [1] to periodic dimer stripes below TC≈ 400 K [2]. The data are compared to undoped IrTe2, for which STM measurements revealed a 1/5 charge modulation below a much lower transition temperature (TC= 275 K) and convergence to the 1/6 ground state below a second transition at TS=180 K [2]. The 1/5 modulation was interpreted as a soliton lattice and its alteration to 1/6 upon Se-doping can consistently be explained by a weakening of the Te-Te bonds by the more electronegative Se atoms, which also increases the transition temperature.
[1] Y. S. Oh et al., Phys. Rev. Lett. 110, 127209 (2013)
P. J. Hsu et al., arXiv:1311.3015v1 (2013)